Khlebnikov, Yuri: search on Z-Library

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1

Dislocation Characterization in 4H-SiC Crystals

Sumakeris, Joseph J., Leonard, R.T., Deyneka, Eugene, Khlebnikov, Yuri, Powell, Adrian R., Seaman, Jeff, Paisley, Michael J., Tsevtkov, V., Guo, Jian Qiu, Yang, Yu, Dudley, Michael, Balkas, Elif

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 1.13 MB

english, 2016

2

An Analytical Study of the SiC Growth Process from Vapor Phase

Cherednichenko, Dimitri I., Khlebnikov, Yuri I., Khlebnikov, I.I., Soloviev, Stanislav I., Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

2000

Language:

english

File:

PDF, 362 KB

english, 2000

3

Influence of the Crystal Thickness on the SiC PVT Growth Rate

Cherednichenko, Dimitri I., Khlebnikov, Yuri I., Drachev, Roman, Khlebnikov, I.I., Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 323 KB

2002

4

Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth

Drachev, Roman, Cherednichenko, Dimitri I., Khlebnikov, I.I., Khlebnikov, Yuri I., Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 219 KB

english, 2003

5

Point and planar defect formation in SiC during PVT growth

Khlebnikov, Yuri I., Drachev, Roman V., Rhodes, Curtis A., Cherednichenko, Dmitry I., Khlebnikov, Igor I., Sudarshan, Tangali S.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 444 KB

english, 2000

6

Dislocation Content of Etch Pits in Hexagonal Silicon Carbide

Khlebnikov, Igor I., Lari, Mohsen B., Khlebnikov, Yuri I., Bondokov, Robert T., Ayyagari, Ramakrishna, Muzykov, Peter, Sudarshan, Tangali S., Anderson, T., Whitlock, J. B.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 2.57 MB

english, 2000

7

Dimensionally stable aerogels from cellulose mechanically treated to a moderate microfibrillar degree

Khlebnikov, Oleg N., Silant’ev, Vladimir E., Shchipunov, Yury A.

Journal:

Mendeleev Communications

Year:

2018

Language:

english

File:

PDF, 545 KB

english, 2018

8

Intrinsic defects in high purity semi-insulating 6H SiC

Savchenko, D. V., Kalabukhova, E. N., Lukin, S. N., Sudarshan, Tangali S., Khlebnikov, Yuri I., Mitchel, William C., Greulich-Weber, S.

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 278 KB

english, 2006

9

Dimensionally stable cellulosic aerogels functionalized by titania

Postnova, Irina, Khlebnikov, Oleg, Silant’ev, Vladimir, Shchipunov, Yury

Journal:

Pure & Applied Chemistry

Year:

2018

Language:

english

File:

PDF, 4.91 MB

english, 2018

10

[IEEE 2017 IEEE 11th International Conference on Application of Information and Communication Technologies (AICT) - Moscow, Russia (2017.9.20-2017.9.22)] 2017 IEEE 11th International Conference on Application of Information and Communication Technologies (AICT) - Control System Design for Plasma Unstable Vertical Position in a Tokamak by Linear Matrix Inequalities

Pavlova, Evgeniia A., Mitrishkin, Yuri V., Khlebnikov, Mikhail V.

Year:

2017

Language:

english

File:

PDF, 597 KB

english, 2017

11

Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions

van Brunt, Edward, O’Loughlin, Michael, Burk, Al, Hull, Brett, Ryu, Sei Hyung, Richmond, Jim, Khlebnikov, Yuri, Balkas, Elif, Gajewski, Donald A., Allen, Scott, Palmour, John W.

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 2.17 MB

english, 2019

12

Homoepitaxial growth on 4H-SiC Substrates by Chemical Vapor Deposition

Hallin, Christer, Khlebnikov, Igor, Khlebnikov, Yuri, Muzykov, Peter, Berkman, Elif, Sharma, Monica, Stratiy, George, Silan, Murat, Basceri, Cem, Balkas, Cengiz

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 252 KB

english, 2006

13

Rapid Anodic Oxidation of 6H-SiC

Khlebnikov, Yuri I., Madangarli, V., Khan, M.A., Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 299 KB

1998

14

Dimensionally Stable Cellulose Aerogel Strengthened by Polyurethane Synthesized In Situ

Verdolotti, Letizia, Stanzione, Mariamelia, Khlebnikov, Oleg, Silant’ev, Vladimir, Postnova, Irina, Lavorgna, Marino, Shchipunov, Yury

Journal:

Macromolecular Chemistry and Physics

Year:

2018

Language:

english

File:

PDF, 3.60 MB

english, 2018

15

SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor

Burk, Albert A., Tsvetkov, Denis, Barnhardt, Dan, O'Loughlin, Michael J., Garrett, Lara, Towner, Paul, Seaman, Jeff, Deyneka, Eugene, Khlebnikov, Yuri, Palmour, John W.

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 625 KB

english, 2012

16

Bulk Growth of Large Area SiC Crystals

Powell, Adrian R., Sumakeris, Joseph J., Khlebnikov, Yuri, Paisley, Michael J., Leonard, R.T., Deyneka, Eugene, Gangwal, Sumit, Ambati, Jyothi, Tsevtkov, V., Seaman, Jeff, McClure, Andy, Horton, Chris

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 1.18 MB

english, 2016

17

Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes

Khlebnikov, I.I., Cherednichenko, Dimitri I., Khlebnikov, Yuri I., Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 450 KB

2000

18

Aluminum and Boron Diffusion into (1-100) Face SiC Substrates

Soloviev, Stanislav I., Gao, Ying, Khlebnikov, Yuri I., Khlebnikov, I.I., Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 252 KB

2002

19

Characterization of Silicon Carbide using Raman Spectroscopy

Burton, J.C., Long, F.H., Khlebnikov, Yuri I., Khlebnikov, I.I., Parker, Mathew, Sudarshan, Tangali S.

Journal:

Materials Science Forum

Year:

2000

Language:

english

File:

PDF, 397 KB

english, 2000

20

One of Many Sources of Defect Generation in SiC

Khlebnikov, Igor I., Sudarshan, Tangali S., Khlebnikov, Yuri I., Wood, Colin

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 2.34 MB

english, 2000

21

In vitro biosynthesis, isolation, and identification of predominant metabolites of 2-(4-(2-hydroxyethoxy)-3,5-dimethylphenyl)-5,7-dimethoxyquinazolin-4(3H)-one (RVX-208)

Khmelnitsky, Yuri L., Mozhaev, Vadim V., Cotterill, Ian C., Michels, Peter C., Boudjabi, Sihem, Khlebnikov, Vladimir, Madhava Reddy, M., Wagner, Gregory S., Hansen, Henrik C.

Journal:

European Journal of Medicinal Chemistry

Year:

2013

Language:

english

File:

PDF, 1.03 MB

english, 2013

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